D.I. Burton - Concepedia

Author

D.I. Burton

Naval Surface Warfare Center

Also Known As

D.I. Burton, David Burton

Publications

443

Citations

H-Index

Concepts

All Affiliations

Naval Surface Warfare Center University of Arizona Naval Sea Systems Command

About

D.I. Burton is an author at Naval Surface Warfare Center specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	430
2	Electrical Engineering	10	10	430
3	Applied Physics	4	4	278
4	Computer Engineering	3	3	70
5	Health Sciences	1	1	25

D.I. Burton

Publications

430

Citations

H-Index

Page 1

	Year	Citations
Single-event gate rupture in vertical power MOSFETs; an original empirical expression C.F. Wheatley, J.L. Titus, D.I. Burton IEEE Transactions on Nuclear Science EngineeringOriginal Empirical ExpressionSemiconductor DeviceGate OxideEmpirical Expression	1994	86
Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression J.L. Titus, C.F. Wheatley, D.I. Burton, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringMono-energetic Ion BeamsNanoelectronicsSegr Failure	1995	83
Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power MOSFETs J.L. Titus, C.F. Wheatley, K.M. van Tyne, IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationEngineeringMono-energetic Ion BeamsNanoelectronics	1998	80
Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs J.L. Titus, C.F. Wheatley, M. Allenspach, IEEE Transactions on Nuclear Science EngineeringIon Beam EnergyPower ElectronicsReliability EngineeringFalse Hardness Assurance	1996	42
A study of ion energy and its effects upon an SEGR-hardened stripe-cell MOSFET technology [space-based systems] J.L. Titus, C.F. Wheatley, J.E. Gillberg, IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringIon ImplantationEngineeringStress-induced Leakage Current	2001	29
The effects of ionizing radiation on power-MOSFET termination structures Kenneth Ralph Davis, Ronald D. Schrimpf, François E. Cellier, IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringEngineeringRadiation GenerationHigh Voltage Engineering	1989	28
Prediction of early lethal SEGR failures of VDMOSFETs for commercial space systems' J.L. Titus, C.F. Wheatley, T.H. Wheatley, IEEE Transactions on Nuclear Science Electrical EngineeringReliability EngineeringEngineeringHealth SciencesLethal Ion Rate	1999	25
An improved stripe-cell SEGR hardened power MOSFET technology M.W. Savage, D.I. Burton, C.F. Wheatley, IEEE Transactions on Nuclear Science Low-power ElectronicsElectrical EngineeringEngineeringHexagonal CellsRadiation-hard Design	2001	25
SEGR response of a radiation-hardened power MOSFET technology C.F. Wheatley, J.L. Titus, D.I. Burton, IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringEngineeringSegr Response CurvesChannel Conductivity	1996	20
Power MOSFETs hardened for single event effects (SEE) in space D.R. Carley, C.F. Wheatley, J.L. Titus, Device ModelingElectrical EngineeringEngineeringPhysicsElectronic Engineering	2002	12

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