C.F. Wheatley - Concepedia

Author

C.F. Wheatley

Naval Surface Warfare Center

Also Known As

C. F . Wheatley, C. F. Wheatley, C. Frank Wheatley, C.F. Wheatley

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Naval Surface Warfare Center University of Arizona Naval Sea Systems Command Consumer Healthcare Products Association Goddard Space Flight Center

About

C.F. Wheatley is an author at Naval Surface Warfare Center specializing in microelectronics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	26	1K
2	Electrical Engineering	20	26	1K
3	Applied Physics	9	9	470
4	Computer Engineering	9	9	414
5	Health Sciences	1	1	25

C.F. Wheatley

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs J.L. Titus, C.F. Wheatley IEEE Transactions on Nuclear Science Experimental ResultsElectrical EngineeringEngineeringHardware ReliabilityPower Device	1996	144
A conceptual model of a single-event gate-rupture in power MOSFETs J.R. Brews, M. Allenspach, Ronald D. Schrimpf, IEEE Transactions on Nuclear Science	1993	92
SEGR and SEB in n-channel power MOSFETs M. Allenspach, C. Dachs, G.H. Johnson, IEEE Transactions on Nuclear Science Hardware SecurityElectrical EngineeringReliability EngineeringEngineeringHardware Reliability	1996	91
Single-event gate rupture in vertical power MOSFETs; an original empirical expression C.F. Wheatley, J.L. Titus, D.I. Burton IEEE Transactions on Nuclear Science EngineeringOriginal Empirical ExpressionSemiconductor DeviceGate OxideEmpirical Expression	1994	86
Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression J.L. Titus, C.F. Wheatley, D.I. Burton, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringMono-energetic Ion BeamsNanoelectronicsSegr Failure	1995	83
Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power MOSFETs J.L. Titus, C.F. Wheatley, K.M. van Tyne, IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationEngineeringMono-energetic Ion BeamsNanoelectronics	1998	80
Single-event gate-rupture in power MOSFETs: prediction of breakdown biases and evaluation of oxide thickness dependence M. Allenspach, I. Mouret, J.L. Titus, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringNanoelectronicsBreakdown BiasesStress-induced Leakage Current	1995	71
Development of cosmic ray hardened power MOSFET's J.L. Titus, L.S. Jamiolkowski, C.F. Wheatley IEEE Transactions on Nuclear Science Electrical EngineeringPower MosfetEngineeringGate RuptureHardware Reliability	1989	48
Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs J.L. Titus, C.F. Wheatley, M. Allenspach, IEEE Transactions on Nuclear Science EngineeringIon Beam EnergyPower ElectronicsReliability EngineeringFalse Hardness Assurance	1996	42
SEE characterization of vertical DMOSFETs: an updated test protocol J.L. Titus, C.F. Wheatley IEEE Transactions on Nuclear Science EngineeringRobustness TestingNew Test ProtocolSemiconductor DeviceHardware Security	2003	36

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