Publication | Closed Access
The effects of ionizing radiation on power-MOSFET termination structures
28
Citations
7
References
1989
Year
Device ModelingElectrical EngineeringEngineeringRadiation GenerationHigh Voltage EngineeringTwo-dimensional SimulationElectronic EngineeringBias Temperature InstabilityRadiation EffectTime-dependent Dielectric BreakdownSingle Event EffectsPower-mosfet Termination StructuresMicroelectronicsEquipotential Field PlatesElectrical InsulationElectromagnetic Compatibility
The effects of ionizing radiation on power-MOSFET termination structures were examined through two-dimensional simulation. A wide range of sensitivity to surface-charge density was found for various devices employing floating field rings and/or equipotential field plates. Termination structures that were both insensitive to surface charge and possessed a high breakdown voltage were identified. The results are compared with measurements made on selected structures. Insights into the design of optimum termination structures are obtained.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
| Year | Citations | |
|---|---|---|
Page 1
Page 1