I. Mouret

Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression

J.L. Titus, C.F. Wheatley, D.I. Burton et al. · IEEE Transactions on Nuclear Science · 1995 · 83 citations

Engineering, Electrical Engineering, Materials Science +17

Single-event gate-rupture in power MOSFETs: prediction of breakdown biases and evaluation of oxide thickness dependence

M. Allenspach, I. Mouret, J.L. Titus et al. · IEEE Transactions on Nuclear Science · 1995 · 71 citations

Engineering, Electrical Engineering, Microelectronics +16

Evaluation of SEGR threshold in power MOSFETs

M. Allenspach, J.R. Brews, I. Mouret et al. · IEEE Transactions on Nuclear Science · 1994 · 63 citations

Engineering, Electrical Engineering, Microelectronics +15

Temperature and angular dependence of substrate response in SEGR [power MOSFET]

I. Mouret, M. Allenspach, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 1994 · 42 citations

Engineering, Electrical Engineering, Materials Science +16

Measurement of a cross-section for single-event gate rupture in power MOSFETs

I. Mouret, P. Calvel, M. Allenspach et al. · IEEE Electron Device Letters · 1996 · 32 citations

Engineering, Electrical Engineering, Microelectronics +15