D. Župac

Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs

D. Župac, K.F. Galloway, P. Khosropour et al. · IEEE Transactions on Nuclear Science · 1993 · 61 citations

Electrical Engineering, Engineering, Physics +14

Analysis of gamma-radiation induced instability mechanisms in CMOS transistors

Sima Dimitrijev, S. Golubović, D. Župac et al. · Solid-State Electronics · 1989 · 43 citations

Electrical Engineering, Engineering, Physics +4

Radiation-induced mobility degradation in <i>p</i>-channel double-diffused metal-oxide-semiconductor power transistors at 300 and 77 K

D. Župac, K.F. Galloway, Ronald D. Schrimpf et al. · Journal of Applied Physics · 1993 · 43 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Effects of radiation-induced oxide-trapped charge on inversion-layer hole mobility at 300 and 77 K

D. Župac, K.F. Galloway, Ronald D. Schrimpf et al. · Applied Physics Letters · 1992 · 37 citations

Electrical Engineering, Ion Implantation, Engineering +13

Application of test method 1019.4 to nonhardened power MOSFETs

P. Khosropour, K.F. Galloway, D. Župac et al. · IEEE Transactions on Nuclear Science · 1994 · 25 citations

Engineering, Nuclear Physics, Radiation Effect +22