S. Golubović - Concepedia

Author

S. Golubović

University of Nis

Also Known As

S GOLUBOVIC, S Golubovic, S. Golubovic, S. Golubović

Publications

900

Citations

H-Index

Concepts

All Affiliations

University of Nis Griffith University

About

S. Golubović is an author at University of Nis specializing in microelectronics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	15	740
2	Electrical Engineering	12	15	740
3	Microelectronics	12	14	729
4	Applied Physics	9	9	517
5	Physics	2	2	60

S. Golubović

Publications

781

Citations

H-Index

Page 1

	Year	Citations
Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs Danijel Danković, V. Davidović, S. Golubović, Microelectronics Reliability Electrical EngineeringEngineeringRf SemiconductorElectronic EngineeringBias Temperature Instability	2021	203
Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors Sandra Veljković, Nikola Mitrović, S. Djoric-Veljković, Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringStress-induced Leakage Current	2021	195
Negative bias temperature instability mechanisms in p-channel power VDMOSFETs N. Stojadinović, Danijel Danković, S. Djoric-Veljković, Microelectronics Reliability Electrical EngineeringEngineeringElectronic EngineeringBias Temperature InstabilityP-channel Power Vdmosfets	2005	58
Analysis of gamma-irradiation induced degradation mechanisms in power VDMOSFETS N. Stojadinović, S. Golubović, S. Djorić, Microelectronics Reliability Electrical EngineeringEngineeringElectronic EngineeringBias Temperature InstabilityPower Vdmosfets	1995	48
Analysis of gamma-radiation induced instability mechanisms in CMOS transistors Sima Dimitrijev, S. Golubović, D. Župac, Solid-State Electronics Electrical EngineeringEngineeringPhysicsCmos TransistorsBias Temperature Instability	1989	43
Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs N. Stojadinović, I. Manić, S. Djoric-Veljković, Microelectronics Reliability Electrical EngineeringEngineeringStress-induced Leakage CurrentBias Temperature InstabilityApplied Physics	2001	38
Effects of electrical stressing in power VDMOSFETs N. Stojadinović, I. Manić, V. Davidović, Microelectronics Reliability Electrical EngineeringEngineeringStress-induced Leakage CurrentBias Temperature InstabilityPower Vdmosfets	2004	37
Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs N. Stojadinović, I. Manić, S. Djoric-Veljković, Microelectronics Reliability Electrical EngineeringEngineeringElevated-temperature BiasElectronic EngineeringHigh Electric Field	2002	21
<i>p</i> MOS transistors for dosimetric application Goran Ristić, S. Golubović, Milić M. Pejović Electronics Letters	1993	20
Modeling Radiation-Induced Mobility Degradation in MOSFETs N. Stojadinović, S. Golubović, V. Davidović, physica status solidi (a) Device ModelingElectrical EngineeringEngineeringPhysicsInterface-trapped Charge Densities	1998	17

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