Application of test method 1019.4 to nonhardened power MOSFETs

Abstract

The applicability of MIL-STD-883D Method 1019.4 to predicting the low-dose-rate radiation response of nonhardened power MOSFETs has been investigated. Method 1019.4 works well in providing bounds for the threshold-voltage shift. However, it is not intended to provide an estimate of the actual /spl Delta/V/sub T/ due to low-dose-rate irradiation. A modified method is proposed which can yield more information on the threshold-voltage shift at low dose rates for power MOSFETs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>