Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs

Abstract

An effective approach to separating the effects of oxide-trapped charge and interface-trapped charge on mobility degradation in irradiated MOSFETs is demonstrated. It is based on analyzing mobility data sets that have different functional relationships between the radiation-induced-oxide-trapped charge and interface-trapped charge. Separation of the effects of these two trapped charge components is only possible if they are not linearly dependent. A significant contribution of oxide-trapped charge to mobility degradation is demonstrated and quantified.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>