Concepedia

F. Roubaud

FR

Statistics

Publications

6

Citations

213

H-Index

6

Active since

1993

Affiliations

Centre National d'Études Spatiales(Current)

Université de Montpellier

Institut d'Électronique et des Systèmes

F. Roubaud is an author at Centre National d'Études Spatiales specializing in engineering, microelectronics, and semiconductor devices.

Publications per year

1993–2005

6

Publications

6

Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs

C. Dachs, F. Roubaud, J.M. Palau et al. · IEEE Transactions on Nuclear Science · 1994 · 60 citations

Engineering, Electrical Engineering, Electronic Materials +14

Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs

F. Roubaud, C. Dachs, J.M. Palau et al. · IEEE Transactions on Nuclear Science · 1993 · 55 citations

Engineering, Electrical Engineering, Microelectronics +12

Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

C. Dachs, F. Roubaud, J.M. Palau et al. · IEEE Transactions on Nuclear Science · 1995 · 40 citations

Engineering, Electrical Engineering, Microelectronics +12

Heavy ion induced failures in a power IGBT

E. Lorfèvre, C. Dachs, C. Detcheverry et al. · IEEE Transactions on Nuclear Science · 1997 · 29 citations

Engineering, Electrical Engineering, Physics +17

Use of 2D simulations to study parameters influence on SEB occurrence in n-channel MOSFETs

F. Roubaud, C. Dachs, J.M. Palau et al. · 2002 · 17 citations

Engineering, Electrical Engineering, Microelectronics +16

1–5 of 6