C. Detcheverry - Concepedia

Author

C. Detcheverry

Philips (Netherlands)

Also Known As

-C. -Detcheverry, C. DETCHEVERRY, C. Detcheverry, Celine Detcheverry

Publications

716

Citations

H-Index

Concepts

All Affiliations

Philips (Netherlands)Philips (Belgium)IMEC Centre National d'Études Spatiales

About

C. Detcheverry is an author at Philips (Netherlands) specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	657
2	Applied Physics	5	5	587
3	Computer Engineering	4	4	52
4	Natural Sciences	1	1	17
5	Chemistry	1	1	209

C. Detcheverry

Publications

657

Citations

H-Index

Page 1

	Year	Citations
Bias stress in organic thin-film transistors and logic gates Stephan J. Zilker, C. Detcheverry, Eugenio Cantatore, Applied Physics Letters Threshold Voltage InstabilitiesElectrical EngineeringElectronic DevicesBias StressElectronic Materials	2001	216
Dopant density determination in disordered organic field-effect transistors E. J. Meijer, C. Detcheverry, Patrick J. Baesjou, Journal of Applied Physics Electrical EngineeringConcentric Device GeometryEngineeringSemiconducting PolymerOrganic Electronics	2003	209
SEU critical charge and sensitive area in a submicron CMOS technology C. Detcheverry, C. Dachs, E. Lorfèvre, IEEE Transactions on Nuclear Science Low-power ElectronicsNon-volatile MemoryElectrical EngineeringParasitic Bipolar ActionVlsi Design	1997	79
1/f noise in pentacene and poly-thienylene vinylene thin film transistors L.K.J. Vandamme, R. Feyaerts, Gy. Trefán, Journal of Applied Physics Organic Charge-transfer CompoundElectrical EngineeringElectronic DevicesEngineeringElectronic Materials	2002	55
Heavy ion induced failures in a power IGBT E. Lorfèvre, C. Dachs, C. Detcheverry, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringBias Temperature InstabilityApplied PhysicsTime-dependent Dielectric Breakdown	1997	28
Integration of a 90nm RF CMOS technology (200GHz f/sub max/ - 150GHz f/sub T/ NMOS) demonstrated on a 5GHz LNA Wutthinan Jeamsaksiri, A. Mercha, J. Ramos, Low-power ElectronicsElectrical EngineeringMonolithic 5GhzEngineeringRadio Frequency	2004	18
First Evaluation of the Single Event Upset (SEU) Risk for Electronics in the CMS Experiment F. Faccio, M. Huhtinen, C. Detcheverry CERN Bulletin Single Event UpsetEngineeringElectromagnetic CompatibilitySeu Error RatesLhc Radiation Environment	1998	17
The effect of copper design rules on inductor performance C. Detcheverry, W. van Noort, R.J.O.M. Hoofman, Inductor Quality FactorElectrical EngineeringEngineeringCircuit DesignCopper Line Width	2004	13
65nm LP/GP mix low cost platform for multi-media wireless and consumer applications B. Tavel, B. Duriez, R. Gwoziecki, Low-power ElectronicsWireless CommunicationsElectrical EngineeringEngineeringVlsi Design	2005	11
The RF Potential of High-performance 100nm CMOS Technology V. C. Venezia, A.J. Scholten, C. Detcheverry, Electrical EngineeringScaled Nmos DevicesEngineeringRadio FrequencyHigh-frequency Device	2002	11

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