Publication | Closed Access
Heavy ion induced failures in a power IGBT
28
Citations
10
References
1997
Year
Electrical EngineeringEngineeringBias Temperature InstabilityApplied PhysicsTime-dependent Dielectric BreakdownPower Semiconductor DeviceDestructive FailuresN-channel Power IgbtsPower ElectronicsDevice ReliabilityHeavy Ion
Heavy ion induced destructive failures are reported in N-channel power IGBTs. For the first time, an experimental and 2D simulation investigation shows that latchup is involved in the triggering of the device.
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