J. Gasiot

A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin film

J.-C. Manifacier, J. Gasiot, J.P. Fillard · Journal of Physics E Scientific Instruments · 1976 · 1.7K citations

Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations

Ph. Roche, J.M. Palau, G. Bruguier et al. · IEEE Transactions on Nuclear Science · 1999 · 135 citations

Non-volatile Memory, Engineering, Vlsi Design +18

SEU critical charge and sensitive area in a submicron CMOS technology

C. Detcheverry, C. Dachs, E. Lorfèvre et al. · IEEE Transactions on Nuclear Science · 1997 · 79 citations

Low-power Electronics, Non-volatile Memory, Electrical Engineering +15

Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs

C. Dachs, F. Roubaud, J.M. Palau et al. · IEEE Transactions on Nuclear Science · 1994 · 59 citations

Device Modeling, Electrical Engineering, Impact Position Effect +13

SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain

Ph. Roche, J.M. Palau, K. Belhaddad et al. · IEEE Transactions on Nuclear Science · 1998 · 55 citations

Non-volatile Memory, Engineering, Vlsi Design +16