J. Gasiot - Concepedia

Author

J. Gasiot

Université de Montpellier

Also Known As

Ecoffet, R., Gasiot, J., J Gasiot, J. GASIOT, J. Gasiot, Jean Gasiot

144

Publications

3.5K

Citations

H-Index

115

Concepts

All Affiliations

Université de Montpellier Centre National d'Études Spatiales Institut d'Électronique et des Systèmes Vanderbilt University Centre National de la Recherche Scientifique

About

J. Gasiot is an author at Université de Montpellier specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	51	1.4K
2	Natural Sciences	6	6	163
3	Health Sciences	5	5	125
4	Medicine	2	2	59
5	Education	1	1	19

J. Gasiot

Publications

3.1K

Citations

H-Index

Page 1

	Year	Citations
A simple method for the determination of the optical constants n, k and the thickness of a weakly absorbing thin film J.-C. Manifacier, J. Gasiot, J.P. Fillard Journal of Physics E Scientific Instruments	1976	1.7K
Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations Ph. Roche, J.M. Palau, G. Bruguier, IEEE Transactions on Nuclear Science Non-volatile MemoryEngineeringVlsi DesignCritical ChargeComputer Architecture	1999	135
SEU critical charge and sensitive area in a submicron CMOS technology C. Detcheverry, C. Dachs, E. Lorfèvre, IEEE Transactions on Nuclear Science Low-power ElectronicsNon-volatile MemoryElectrical EngineeringParasitic Bipolar ActionVlsi Design	1997	79
Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs C. Dachs, F. Roubaud, J.M. Palau, IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringImpact Position EffectEngineeringPhysics	1994	59
SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain Ph. Roche, J.M. Palau, K. Belhaddad, IEEE Transactions on Nuclear Science Non-volatile MemoryEngineeringVlsi DesignFirst Seu ResponseInterconnect (Integrated Circuits)	1998	55
Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs F. Roubaud, C. Dachs, J.M. Palau, IEEE Transactions on Nuclear Science EngineeringPower ElectronicsHigh Voltage EngineeringModeling And SimulationPulse Power	1993	55
Nanosecond infrared laser stimulation of luminescence in rare-earth doped sulfides J. Gasiot, P. Bräunlich, J.P. Fillard Applied Physics Letters EngineeringChemistryLuminescence PropertyX-ray FluorescenceBeam Optic	1982	53
A new approach for the prediction of the neutron-induced SEU rate Claire Vial, J.M. Palau, J. Gasiot, IEEE Transactions on Nuclear Science Electrical EngineeringSeu Rate PredictionEngineeringNuclear PhysicsPhysics	1998	48
Effect of switching from high to low dose rate on linear bipolar technology radiation response J. Boch, Frédéric Saigné, Ronald D. Schrimpf, IEEE Transactions on Nuclear Science EngineeringRadiation EffectHigh Dose RateRadiation ExposureLow Dose Rate	2004	40
Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout C. Dachs, F. Roubaud, J.M. Palau, IEEE Transactions on Nuclear Science EngineeringPower Optimization (Eda)Power ElectronicsElectronic PackagingPower-aware Design	1995	40

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