IEEE Transactions on Nuclear Science · 1998 · 55 citations · 11 references
EngineeringComputer EngineeringElectrical EngineeringCell JunctionsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice SimulationIntegrated Circuit DesignMemory Subsystem DesignVery-large-scale Integration Layout3D Stacked MemoryCompact Device ModelingCompact ModelingComplementary Metal-oxide-semiconductor SimulationMemory Device SimulationMetal-oxide-semiconductor Field-effect Transistor ModelingMixed-mode RetentionThree-dimensional Memory
The first SEU response of a complete 3-D SRAM cell is presented. This simulation method allows one to verify the accuracy of the commonly used mixed-mode technique and to study coupling effects between different junctions of the cell.
11
Single particle-induced latchup
G. Bruguier, J.M. Palau · IEEE Transactions on Nuclear Science · 1996 · 144 citations
Impact of technology trends on SEU in CMOS SRAMs
P.E. Dodd, F.W. Sexton, G.L. Hash et al. · IEEE Transactions on Nuclear Science · 1996 · 126 citations
Engineering, Computer Engineering, Electrical Engineering +17