Publication | Closed Access
Use of 2D simulations to study parameters influence on SEB occurrence in n-channel MOSFETs
17
Citations
7
References
2002
Year
Unknown Venue
Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringSeb OccurrenceHigh Voltage EngineeringNanoelectronicsElectronic EngineeringBias Temperature InstabilitySingle Event EffectsN-channel MosfetsSoftware MediciSingle Event BurnoutPower Mosfet CellMicroelectronicsCircuit Simulation
Heavy-ion-induced effects on a power MOSFET cell are simulated with the 2D software MEDICI. The effect on single event burnout (SEB) sensitivity of several parameters (impact position, incidence angle, V/sub DS/ bias voltage, LET of the incident particle, etc...) is analyzed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
| Year | Citations | |
|---|---|---|
Page 1
Page 1