Applied Physics Letters · 2001 · 111 citations · 9 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportChemical Vapor DepositionDopingSemiconductor Device MaterialsSemiconductor HeterostructuresStrain EngineeringElectron MobilityHeterostructure DevicesHeterostructure Field-effect TransistorsHigh-electron-mobility TransistorsSilicon DopingSilicon-on-insulator ProcessingSilicon-on-insulator TechnologyWafer-to-wafer Bonding
SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-induced layer transfer techniques. The transferred SiGe layer is strain relaxed and has a Ge content ranging from 15% to 25%. High-quality strained Si layers were grown on the SiGe-on-insulator substrates by the UHV/chemical vapor deposition process at 550 °C. An electron mobility of 40 000 cm2/V s in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate.
9