Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Yong Cai, Yugang Zhou, Kevin J. Chen et al. · IEEE Electron Device Letters · 2005 · 641 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

R. Simms, James W. Pomeroy, Michael J. Uren et al. · IEEE Transactions on Electron Devices · 2008 · 124 citations

Wide-bandgap Semiconductor, Peak Channel Temperatures, Electrical Engineering +15

Copper gate AlGaN/GaN HEMT with low gate leakage current

Jin‐Ping Ao, Daigo Kikuta, Naotaka Kubota et al. · IEEE Electron Device Letters · 2003 · 74 citations

Materials Science, Semiconductors, Electrical Engineering +11

Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP

A. Mahajan, M. Arafa, Patrick Fay et al. · IEEE Transactions on Electron Devices · 1998 · 64 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Schottky barrier heights of n-type and p-type Al/sub 0.48/In/sub 0.52/As

L.P. Sadwick, C.W. Kim, K.L. Tan et al. · IEEE Electron Device Letters · 1991 · 60 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12