L.P. Sadwick - Concepedia

Author

L.P. Sadwick

University of Utah

Also Known As

L. P. Sadwick, L. Sadwick, L.P. Sadwick, Laurence P. Sadwick

Publications

419

Citations

H-Index

Concepts

All Affiliations

University of Utah Redondo Optics (United States)University of California, Los Angeles

About

L.P. Sadwick is an author at University of Utah specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	259
2	Applied Physics	8	8	227
3	Electrical Engineering	6	6	168
4	Chemistry	4	4	52
5	Natural Sciences	1	1	20

L.P. Sadwick

Publications

297

Citations

H-Index

Page 1

	Year	Citations
Schottky barrier heights of n-type and p-type Al/sub 0.48/In/sub 0.52/As L.P. Sadwick, C.W. Kim, K.L. Tan, IEEE Electron Device Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringAluminium NitrideEngineering	1991	60
Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon T. L. Lin, L.P. Sadwick, K. L. Wang, Applied Physics Letters Materials ScienceElectrical EngineeringEpitaxial GrowthEngineeringNanoelectronics	1987	41
Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions Andrew Erickson, L.P. Sadwick, G. Neubauer, Journal of Electronic Materials Materials ScienceNanoscale SystemEngineeringNanoscale DimensionsNanotechnology	1996	39
A treatise on the capacitance&#8212;Voltage relation of high electron mobility transistors L.P. Sadwick, K.L. Wang IEEE Transactions on Electron Devices	1986	28
Effect of rapid thermal annealing on planar-doped pseudomorphic InGaAs high electron mobility transistor structures D.C. Streit, W. Linwood Jones, L.P. Sadwick, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	1991	20
Observation of carbon incorporation during gallium arsenide growth by molecular beam epitaxy David Joseph, Rajappan Balagopal, Robert F. Hicks, Applied Physics Letters Materials ScienceEngineeringNatural SciencesSpectroscopyCrystal Growth Technology	1988	20
Effect of exponentially graded base doping on the performance of GaAs/AlGaAs heterojunction bipolar transistors D.C. Streit, M. Hafizi, D.K. Umemoto, IEEE Electron Device Letters Wide-bandgap SemiconductorBase DopingElectrical EngineeringGraded Base DopingEngineering	1991	19
Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealing L.P. Sadwick, D.C. Streit, W. Linwood Jones, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorPseudomorphic Algaas/ingaas/gaas StructuresEngineeringOptoelectronic DevicesPseudomorphic Hemt Structures	1992	15
Enhancement of high-temperature high-frequency performance of GaAs-based FETs by the high-temperature electronic technique Rajendra Narasimhan, L.P. Sadwick, R.J. Hwu IEEE Transactions on Electron Devices Electrical EngineeringSemiconductor DeviceEngineeringPhysicsGaas-based Mesfets	1999	13
Tris-dimethylaminophosphorus reactions at low pressure on GaP, InP and quartz surfaces Curtis Hill, G. B. Stringfellow, L.P. Sadwick Journal of Crystal Growth Materials ScienceInorganic ChemistryEngineeringQuartz SurfacesSurface Chemistry	1996	11

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