IEEE Electron Device Letters · 1992 · 10 citations · 19 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ReliabilityMetal-oxide-semiconductor Field-effect TransistorsNitrogen OxidesOxide SemiconductorsSemiconductor ReliabilitySurface OxidationGate LeakageGate Leakage CurrentGate Oxide DegradationGate Oxide LeakageImpurity DiffusionJunction Leakage CurrentLeakageNitrous Oxide
Nitrided gate oxides offer several electrical and reliability advantages over conventional oxides and also provide a good barrier against impurity diffusion. Oxidation in nitrous oxide (N/sub 2/O) has been very successful in overcoming some of the problems associated with nitridation in ammonia. The authors have observed that the extent of N/sub 2/O oxidation has a strong detrimental effect on the drain leakage current of MOS transistors in the off state. This phenomenon has been identified to be caused by an increase in the active area junction leakage current.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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