V.K. Mathews

Highly reliable, high-C DRAM storage capacitors with CVD TA/sub 2/O/sub 5/ films on rugged polysilicon

G. Q. Lo, D. L. Kwong, P. Fazan et al. · IEEE Electron Device Letters · 1993 · 37 citations

Non-volatile Memory, Engineering, Rugged Poly-si Electrodes +20

Dishing effects in a chemical mechanical polishing planarization process for advanced trench isolation

Chao Yu, P. Fazan, V.K. Mathews et al. · Applied Physics Letters · 1992 · 32 citations

Engineering, Mechanical Engineering, Advanced Trench Isolation +17

Highly reliable SiO/sub 2//Si/sub 3/N/sub 4/ stacked dielectric on rapid-thermal-nitrided rugged polysilicon for high-density DRAM's

G. Q. Lo, Seiichi Ito, Dim‐Lee Kwong et al. · IEEE Electron Device Letters · 1992 · 23 citations

Engineering, Integrated Circuits, Thin Film Process Technology +18

A highly manufacturable trench isolation process for deep submicron DRAMs

P. Fazan, V.K. Mathews · 2002 · 21 citations

Electrical Engineering, Engineering, Deep Submicron Drams +12

Effects of post-deposition annealing on the electrical properties and reliability of ultrathin chemical vapor deposited Ta/sub 2/O/sub 5/ films

L.K. Han, Giwan Yoon, D. L. Kwong et al. · IEEE Electron Device Letters · 1994 · 20 citations

Engineering, Emerging Memory Technology, Integrated Circuits +22