High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge

Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

Massimo V. Fischetti, S.E. Laux · Journal of Applied Physics · 1996 · 1.5K citations

Natural Sciences, Materials Science, Physics +17

Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

Shu Nakaharai, Tsutomu Tezuka, Naoharu Sugiyama et al. · Applied Physics Letters · 2003 · 260 citations

Engineering, Materials Engineering, Materials Science +17

Oxidation of Si1−<i>x</i>Ge<i>x</i> alloys at atmospheric and elevated pressure

David C. Paine, Christine Caragianis, A. F. Schwartzman · Journal of Applied Physics · 1991 · 114 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth of strained Si and strained Ge heterostructures on relaxed Si1−xGex by ultrahigh vacuum chemical vapor deposition

Minjoo Larry Lee, Arthur J. Pitera, Eugene A. Fitzgerald · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2004 · 48 citations

Natural Sciences, Materials Engineering, Materials Science +17

Ge substrates made by Ge-condensation technique: Challenges and current understanding

V. Terzieva, Laurent Souriau, Francesca Clemente et al. · Materials Science in Semiconductor Processing · 2006 · 19 citations

Natural Sciences, Materials Engineering, Materials Science +10