Concepedia

Strain-driven Epitaxy

Strain-Driven Epitaxy is a method of epitaxial growth in which lattice mismatch-induced strain governs the nucleation, morphology, and structural evolution of the epitaxial layer.

247

Publications

12.3K

Citations

1.1K

Authors

317

Institutions

Publications per year

2017–2026

28

Parents

Publications

247

The role of surface stress in reconstruction, epitaxial growth and stabilization of mesoscopic structures

H. Ibach · Surface Science Reports · 1997 · 836 citations

, , +16

Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained In<i>x</i>Ga1−<i>x</i>As on GaAs(100)

Supratik Guha, A. Madhukar, K. C. Rajkumar · Applied Physics Letters · 1990 · 663 citations

, , +16

Doubling the critical temperature of La1.9Sr0.1CuO4 using epitaxial strain

Jean‐Pierre Locquet, J. Perret, J. Fompeyrine et al. · Nature · 1998 · 647 citations

, , +13

Self-organized growth of strained InGaAs quantum disks

R. Nötzel, Jiro Temmyo, Toshiaki Tamamura · Nature · 1994 · 374 citations

, , +14

Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation

D. E. Jesson, Stephen J. Pennycook, J.‐M. Baribeau et al. · Physical Review Letters · 1993 · 257 citations

, , +17

1–5 of 247

Authors

1.1K

  1. AM
    A. Madhukar

    University of Southern California, United States

    7 publications · 997 citations

    7

    h-index

  2. PM
    P. M. Marcus

    State University of New York, United States

    5 publications · 290 citations

    5

    h-index

  3. JT
    J. Tersoff

    IBM Research - Thomas J. Watson Research Center, United States

    5 publications · 190 citations

    5

    h-index

  4. FJ
    F. Jona

    State University of New York, United States

    4 publications · 150 citations

    4

    h-index

  5. RN
    R. Nötzel

    Eindhoven University of Technology, Netherlands

    4 publications · 431 citations

    4

    h-index

1–5 of 1.1K

Institutions

317

  1. Centre National de la Recherche Scientifique

    Paris, France

    16 h-index

    58 publications

    2.1K citations

  2. IBM (United States)

    Armonk, United States

    9 h-index

    16 publications

    922 citations

  3. Chinese Academy of Sciences

    Beijing, China

    9 h-index

    51 publications

    1.4K citations

  4. University of Southern California

    Los Angeles, United States

    7 h-index

    24 publications

    3.5K citations

  5. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    7 h-index

    10 publications

    589 citations

  6. University of Illinois Urbana-Champaign

    Urbana, United States

    6 h-index

    18 publications

    669 citations

  7. Max Planck Institute for Solid State Research

    Stuttgart, Germany

    6 h-index

    12 publications

    385 citations

  8. Orange (France)

    Paris, France

    6 h-index

    24 publications

    1.3K citations

1–8 of 317

Venues

  1. Applied Physics Letters

    38 publications · 2.3K citations

    23

    h-index

  2. Physical Review Letters

    PRL · 22 publications · 1.7K citations

    17

    h-index

  3. Journal of Crystal Growth

    23 publications · 576 citations

    15

    h-index

  4. Physical review. B, Condensed matter

    PRB · 12 publications · 614 citations

    12

    h-index

  5. Journal of Applied Physics

    16 publications · 479 citations

    12

    h-index

1–5