The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology

A 90-nm logic technology featuring strained-silicon

Scott E. Thompson, M Armstrong, C. Auth et al. · IEEE Transactions on Electron Devices · 2004 · 654 citations

Electrical Engineering, Engineering, Nanoelectronics +10

Chiral Quest receives US patent for DIOP* ligand family

Focus on Catalysts · 2003 · 246 citations

Medicine, Chiral Quest, Therapeutic Patent +4

On the enhanced electron mobility in strained-silicon inversion layers

Massimo V. Fischetti, F. Gámiz, W. Hänsch · Journal of Applied Physics · 2002 · 229 citations

Large Enhancement, Electrical Engineering, Semiconductor Device +13

Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

C. W. Leitz, M. T. Currie, Minjoo Larry Lee et al. · Journal of Applied Physics · 2002 · 169 citations

Semiconductors, Layer Thickness, Electrical Engineering +9

Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

K. Rim, J. O. Chu, H. Chen et al. · 2003 · 143 citations

Electrical Engineering, Engineering, Strained Si Devices +11