Ramkumar Krithivasan

Author

Georgia Institute of Technology

Also Known As

Ramkumar Krithivasan

Publications

337

Citations

H-Index

Concepts

All Affiliations

Georgia Institute of Technology Auburn University Vanderbilt University Goddard Space Flight Center IBM (United States)

About

Ramkumar Krithivasan is an author at Georgia Institute of Technology specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	12	328
2	Electrical Engineering	9	9	272
3	Applied Physics	8	8	221
4	Computer Engineering	5	5	128
5	Natural Sciences	1	1	33

Ramkumar Krithivasan

Publications

328

Citations

H-Index

Page 1

	Year	Citations
On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds Jiahui Yuan, John D. Cressler, Ramkumar Krithivasan, IEEE Transactions on Electron Devices Thz PhotonicsTerahertz TechnologyEngineeringTransistor PerformanceTerahertz Photonics	2009	53
Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits Ramkumar Krithivasan, Paul W. Marshall, Mustayeen B. Nayeem, IEEE Transactions on Nuclear Science Electrical EngineeringPhysical Design (Electronics)EngineeringVlsi DesignAdvanced Packaging (Semiconductors)	2006	49
Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies Jonathan A. Pellish, Robert A. Reed, Ronald D. Schrimpf, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringDeep Trench IsolationMitigate Charge CollectionApplied Physics	2006	47
Single Event Upset Mechanisms for Low-Energy-Deposition Events in SiGe HBTs Enrique Montes, Robert A. Reed, Jonathan A. Pellish, IEEE Transactions on Nuclear Science Device ModelingElectrical EngineeringEngineeringPhysicsCritical Charge	2008	34
A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations Jonathan A. Pellish, Robert A. Reed, Akil K. Sutton, IEEE Transactions on Nuclear Science Orbit DeterminationHeavy Ion PhysicExperimental Nuclear PhysicsNuclear PhysicsPhysics	2007	33
A High-Slew Rate SiGe BiCMOS Operational Amplifier for Operation Down to Deep Cryogenic Temperatures Ramkumar Krithivasan, Yuan Lu, Laleh Najafizadeh, Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting Electrical EngineeringEngineeringRf SemiconductorPhysicsElectronic Engineering	2006	29
SiGe BiCMOS Precision Voltage References for Extreme Temperature Range Electronics Laleh Najafizadeh, Chendong Zhu, Ramkumar Krithivasan, Unique Ge ProfilesEngineeringVlsi DesignCircuit SystemNanoelectronics	2006	21
SEU Error Signature Analysis of Gbit/s SiGe Logic Circuits Using a Pulsed Laser Microprobe Akil K. Sutton, Ramkumar Krithivasan, Paul W. Marshall, IEEE Transactions on Nuclear Science EngineeringVlsi DesignHardware Verification LanguageMem TestingComputer Architecture	2006	15
A 70 MHz - 4.1 GHz 5th-Order Elliptic gm-C Low-Pass Filter in Complementary SiGe Technology Yuan Lu, Ramkumar Krithivasan, Wei-Min Lance Kuo, Electrical EngineeringComplementary Sige TechnologySub XmlnsEngineeringPhysics	2006	14
Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGe HBTs Qingqing Liang, Ramkumar Krithivasan, Adnan Ahmed, Solid-State Electronics EngineeringPhysicsBias Temperature InstabilityCryogenicsApplied Physics	2006	13

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