Concepedia

B.M. Haugerud

BH

13

Publications

424

Citations

12

H-Index

2003

Active since

Affiliations

Georgia Institute of Technology(Current)

Goddard Space Flight Center

IBM (United States)

Auburn University

Burzynski Research Institute

B.M. Haugerud is an author at Georgia Institute of Technology specializing in electrical engineering, microelectronics, and engineering.

Top concepts

EngineeringMicroelectronicsElectrical EngineeringApplied PhysicsPhysicsNanoelectronicsCosmic RayNuclear PhysicsNatural SciencesRadiation Effects

Publications per year

2003–2006

13

Publications

13

Mechanically induced strain enhancement of metal–oxide–semiconductor field effect transistors

B.M. Haugerud, Lucy A. Bosworth, R. E. Belford · Journal of Applied Physics · 2003 · 62 citations

Semiconductor Technology, Electrical Engineering, Effective Mobility μEff +14

Proton radiation effects in 4H-SiC diodes and MOS capacitors

Zhiyun Luo, Tianbing Chen, A. C. Ahyi et al. · IEEE Transactions on Nuclear Science · 2004 · 51 citations

Electrical Engineering, Ion Implantation, Engineering +15

A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs

Akil K. Sutton, B.M. Haugerud, A. P. Gnana Prakash et al. · IEEE Transactions on Nuclear Science · 2005 · 50 citations

Engineering, Nuclear Physics, Radio Frequency +22

Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs

Akil K. Sutton, B.M. Haugerud, Yuan Lu et al. · IEEE Transactions on Nuclear Science · 2004 · 49 citations

Electrical Engineering, Engineering, Nuclear Physics +14

Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits

Ramkumar Krithivasan, Paul W. Marshall, Mustayeen B. Nayeem et al. · IEEE Transactions on Nuclear Science · 2006 · 49 citations

Electrical Engineering, Physical Design (Electronics), Engineering +14

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