B.M. Haugerud - Concepedia

Author

B.M. Haugerud

Georgia Institute of Technology

Also Known As

B. M. Haugerud, B.M. Haugerud, Becca M. Haugerud

Publications

446

Citations

H-Index

Concepts

All Affiliations

Georgia Institute of Technology Goddard Space Flight Center IBM (United States)Auburn University Burzynski Research Institute

About

B.M. Haugerud is an author at Georgia Institute of Technology specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	393
2	Applied Physics	10	10	320
3	Natural Sciences	3	3	131
4	Computer Engineering	2	2	73
5	Health Sciences	1	1	50

B.M. Haugerud

Publications

424

Citations

H-Index

Page 1

	Year	Citations
Mechanically induced strain enhancement of metal–oxide–semiconductor field effect transistors B.M. Haugerud, Lucy A. Bosworth, R. E. Belford Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringEffective Mobility μEffEngineeringSemiconductor Device	2003	62
Proton radiation effects in 4H-SiC diodes and MOS capacitors Zhiyun Luo, Tianbing Chen, A. C. Ahyi, IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationEngineeringNuclear PhysicsPhysics	2004	51
A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs Akil K. Sutton, B.M. Haugerud, A. P. Gnana Prakash, IEEE Transactions on Nuclear Science EngineeringNuclear PhysicsRadio FrequencyRadiation Materials ScienceRadiation Physics	2005	50
Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs Akil K. Sutton, B.M. Haugerud, Yuan Lu, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringNuclear PhysicsPhysicsHigh-frequency Device	2004	49
Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits Ramkumar Krithivasan, Paul W. Marshall, Mustayeen B. Nayeem, IEEE Transactions on Nuclear Science Electrical EngineeringPhysical Design (Electronics)EngineeringVlsi DesignAdvanced Packaging (Semiconductors)	2006	49
Proton and gamma radiation effects in a new first-generation SiGe HBT technology B.M. Haugerud, Mustansir M. Pratapgarhwala, Jonathan P. Comeau, Solid-State Electronics Gamma Radiation EffectsElectrical EngineeringNuclear PhysicsPhysicsRf Semiconductor	2006	31
The effects of radiation on 1/f noise in complementary (npn+pnp) SiGe HBTs Enhai Zhao, Akil K. Sutton, B.M. Haugerud, IEEE Transactions on Nuclear Science Electrical EngineeringHbt Bicmos TechnologyEngineeringPhysicsHigh-frequency Device	2004	28
Proton radiation response of monolithic Millimeter-wave transceiver building blocks implemented in 200 GHz SiGe technology Wei-Min Lance Kuo, Yuan Lu, Brian Floyd, IEEE Transactions on Nuclear Science Ghz Sige TechnologyEngineeringRadio FrequencyMev Proton IrradiationProton Tolerance Perspective	2004	24
Proton tolerance of advanced SiGe HBTs fabricated on different substrate materials Jonathan P. Comeau, Akil K. Sutton, B.M. Haugerud, IEEE Transactions on Nuclear Science EngineeringSilicon On InsulatorDifferent Substrate MaterialsSemiconductor DeviceRf Semiconductor	2004	21
Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI T. Chen, Akil K. Sutton, Marco Bellini, IEEE Transactions on Nuclear Science Electrical EngineeringCmos-compatible SoiEngineeringVertical Sige HbtsPhysics	2005	19

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