A. C. Ahyi

Role of self-trapped holes in the photoconductive gain of <i>β</i>-gallium oxide Schottky diodes

Andrew Armstrong, Mary H. Crawford, Asanka Jayawardena et al. · Journal of Applied Physics · 2016 · 180 citations · Full text

Wide-bandgap Semiconductor, Engineering, Solar-blind Photodetection +20

Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

John Rozen, A. C. Ahyi, Xingguang Zhu et al. · IEEE Transactions on Electron Devices · 2011 · 129 citations

Semiconductor Technology, Trap Distribution, Electrical Engineering +13

Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

Gang Liu, A. C. Ahyi, Yi Xu et al. · IEEE Electron Device Letters · 2013 · 107 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

Yogesh Sharma, A. C. Ahyi, Tamara Isaacs‐Smith et al. · IEEE Electron Device Letters · 2013 · 81 citations

Semiconductors, Materials Engineering, Electrical Engineering +12

Analysis of temperature dependent forward characteristics of Ni/$(\bar{2}01)$<i>β</i>-Ga₂O₃Schottky diodes

Asanka Jayawardena, A. C. Ahyi, Sarit Dhar · Semiconductor Science and Technology · 2016 · 67 citations

Semiconductors, Materials Science, Electrical Engineering +12