A. C. Ahyi

Role of self-trapped holes in the photoconductive gain of <i>β</i>-gallium oxide Schottky diodes

Andrew Armstrong, Mary H. Crawford, Asanka Jayawardena et al. · Journal of Applied Physics · 2016 · 185 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

John Rozen, A. C. Ahyi, Xingguang Zhu et al. · IEEE Transactions on Electron Devices · 2011 · 131 citations

Engineering, Electrical Engineering, Physics +17

Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

Gang Liu, A. C. Ahyi, Yi Xu et al. · IEEE Electron Device Letters · 2013 · 109 citations

Engineering, Electrical Engineering, Materials Science +17

High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

Yogesh Sharma, A. C. Ahyi, Tamara Isaacs‐Smith et al. · IEEE Electron Device Letters · 2013 · 81 citations

Engineering, Electrical Engineering, Materials Science +12

Interface trapping in (2¯01) β-Ga2O3 MOS capacitors with deposited dielectrics

Asanka Jayawardena, Rahul P. Ramamurthy, A. C. Ahyi et al. · Applied Physics Letters · 2018 · 69 citations

Engineering, Materials Engineering, Materials Science +17