Rahul P. Ramamurthy

Interface trapping in (2¯01) β-Ga2O3 MOS capacitors with deposited dielectrics

Asanka Jayawardena, Rahul P. Ramamurthy, A. C. Ahyi et al. · Applied Physics Letters · 2018 · 65 citations

Oxide Heterostructures, Materials Science, Electrical Engineering +12

The Tri-Gate MOSFET: A New Vertical Power Transistor in 4H-SiC

Rahul P. Ramamurthy, Naeem Islam, Madankumar Sampath et al. · IEEE Electron Device Letters · 2020 · 18 citations

Electrical Engineering, Engineering, Tri-gate Mosfet +10

Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors

Isanka Udayani Jayawardhena, Rahul P. Ramamurthy, Dallas Morisette et al. · Journal of Applied Physics · 2021 · 16 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Electron beam-induced crystallization of Al2O3 gate layer on β-Ga2O3 MOS capacitors

Christopher J. Klingshirn, Asanka Jayawardena, Sarit Dhar et al. · Micron · 2020 · 10 citations

Materials Science, Materials Engineering, Electrical Engineering +10