Yogesh Sharma

Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

Gang Liu, A. C. Ahyi, Yi Xu et al. · IEEE Electron Device Letters · 2013 · 109 citations

Engineering, Electrical Engineering, Materials Science +17

High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

Yogesh Sharma, A. C. Ahyi, Tamara Isaacs‐Smith et al. · IEEE Electron Device Letters · 2013 · 81 citations

Engineering, Electrical Engineering, Materials Science +12

SiC MOSFET with built-in SBD for reduction of reverse recovery charge and switching loss in 10-kV applications

Huaping Jiang, Jin Wei, Xiaoping Dai et al. · 2017 · 65 citations

Engineering, Electrical Engineering, Materials Science +17

Atomic state and characterization of nitrogen at the SiC/SiO2 interface

Yi Xu, X. Zhu, H. D. Lee et al. · Journal of Applied Physics · 2014 · 61 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Phosphorous passivation of the SiO2/4H–SiC interface

Yogesh Sharma, A. C. Ahyi, Xiao Shen et al. · Solid-State Electronics · 2011 · 60 citations

Engineering, Materials Engineering, Materials Science +14