Phosphorous passivation of the SiO2/4H–SiC interface

Trends in power semiconductor devices

B. Jayant Baliga · IEEE Transactions on Electron Devices · 1996 · 446 citations

Engineering, Electrical Engineering, Microelectronics +13

Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · Applied Physics Letters · 2000 · 434 citations

Engineering, Materials Engineering, Materials Science +17

Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

Dai Okamoto, Hiroshi Yano, Kenji Hirata et al. · IEEE Electron Device Letters · 2010 · 305 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of nitridation in gate oxides grown on 4H-SiC

Philippe Jamet, Sima Dimitrijev, Philip Tanner · Journal of Applied Physics · 2001 · 270 citations

Engineering, Materials Engineering, Materials Science +17

Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype

Reinhold Schomer, Peter Friedrichs, Dethard Peters et al. · IEEE Electron Device Letters · 1999 · 227 citations

Engineering, Electrical Engineering, Materials Science +17