Tamara Isaacs‐Smith

Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

Gang Liu, A. C. Ahyi, Yi Xu et al. · IEEE Electron Device Letters · 2013 · 107 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

Yogesh Sharma, A. C. Ahyi, Tamara Isaacs‐Smith et al. · IEEE Electron Device Letters · 2013 · 81 citations

Semiconductors, Materials Engineering, Electrical Engineering +12

Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(1120) 4H–SiC interface

Sarit Dhar, YONG-WON SONG, L. C. Feldman et al. · Applied Physics Letters · 2004 · 77 citations

Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC

J. Crofton, Suzanne E. Mohney, John R. Williams et al. · Solid-State Electronics · 2002 · 74 citations

Materials Engineering, Materials Science, Engineering +6

Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate

Yi Zhou, Claude Ahyi, Tamara Isaacs‐Smith et al. · Solid-State Electronics · 2007 · 72 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +10