Hot-carrier-induced degradation in p-channel LDD MOSFET's

Abstract

When the p-channel MOSFET is stressed near the maximum substrate current I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sub</inf> , the lifetime t (5-percent increase in the transconductance) follows <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">tI_{sub} = A(I_{sub}/I_{d})^{-n}</tex> , with n = 2.0. A simple electron trapping model is proposed to explain the observed power law relationship. The current ratio <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I_{sub}/I_{d}</tex> and the maximum channel electric field decrease with increasing stress time, which is consistent with electron trapping in the oxide during the stress.