An energy relaxation time model for device simulation

Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. II. Submicrometer MOSFET's

IEEE Transactions on Electron Devices · 1991 · 175 citations

Engineering, Semiconductor Physics, Semiconductor Materials +18

Electron drift velocity and diffusivity in germanium

Carlo Jacoboni, F. Nava, C. Canali et al. · Physical review. B, Condensed matter · 1981 · 174 citations

Materials Science, Electron Drift Velocity, Engineering +14

MODFET 2-D hydrodynamic energy modeling: optimization of subquarter-micron-gate structures

T.G. Shawki, G. Salmer, O.L. El-Sayed · IEEE Transactions on Electron Devices · 1990 · 64 citations

Engineering, Quantum Engineering, Nanoelectronics +16

Self-consistent 2-D model for quantum effects in n-MOS transistors

Alessandro S. Spinelli, A. Benvenuti, A. Pacelli · IEEE Transactions on Electron Devices · 1998 · 63 citations

Device Modeling, Quantum Science, Electrical Engineering +12

An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's

V.M. Agostinelli, T.J. Bordelon, X.L. Wang et al. · IEEE Electron Device Letters · 1992 · 18 citations

Substrate Current Model, Engineering, Integrated Circuits +16