An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's

Abstract

A multicurrent contour, average-energy-based, substrate current model for silicon submicrometer NMOSFETs is presented as a significant improvement to the local-field model that is commonly used in modern drift-diffusion device simulators. The model is implemented as a post-processor by applying a one-dimensional energy conservation equation to many current contours in order to generate a two-dimensional representation of average energy and impact ionization rate which is integrated to calculate the substrate current. Comparisons of simulations and experimental I-V curves for both simple and LDD MOSFETs are presented. Outstanding agreement has been obtained over a wide range of bias conditions and channel lengths.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>