V.M. Agostinelli

Statistics

Publications

Citations

230

H-Index

Active since

1991

Affiliations

The University of Texas at Austin(Current)

Intel (United States)

Motorola (United States)

V.M. Agostinelli is an author at The University of Texas at Austin specializing in metal-oxide-semiconductor field-effect transistors, device modeling, and semiconductor devices.

Publications per year

1991–1997

Publications

A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's

K. Hasnat, Choh-Fei Yeap, S. Jallepalli et al. · IEEE Transactions on Electron Devices · 1996 · 71 citations

Engineering, Electrical Engineering, Computational Electromagnetics +16

A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's

V.M. Agostinelli, Hyo-Seob Shin, A.F. Tasch · IEEE Transactions on Electron Devices · 1991 · 53 citations

Engineering, Electrical Engineering, Electronic Materials +16

Thermionic emission model of electron gate current in submicron NMOSFETs

K. Hasnat, Choh-Fei Yeap, S. Jallepalli et al. · IEEE Transactions on Electron Devices · 1997 · 42 citations

Engineering, Electrical Engineering, Microelectronics +16

Two-dimensional energy-dependent models for the simulation of substrate current in submicron MOSFET's

V.M. Agostinelli, T.J. Bordelon, Xiaolin Wang et al. · IEEE Transactions on Electron Devices · 1994 · 18 citations

Engineering, Computer Engineering, Electrical Engineering +17

An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's

V.M. Agostinelli, T.J. Bordelon, X.L. Wang et al. · IEEE Electron Device Letters · 1992 · 18 citations

Engineering, Computer Engineering, Electrical Engineering +17

1–5 of 7