V.M. Agostinelli

A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's

K. Hasnat, Choh-Fei Yeap, S. Jallepalli et al. · IEEE Transactions on Electron Devices · 1996 · 70 citations

Device Modeling, Electrical Engineering, Lucky Electron Model +15

A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's

V.M. Agostinelli, Hyo-Seob Shin, A.F. Tasch · IEEE Transactions on Electron Devices · 1991 · 53 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +14

Thermionic emission model of electron gate current in submicron NMOSFETs

K. Hasnat, Choh-Fei Yeap, S. Jallepalli et al. · IEEE Transactions on Electron Devices · 1997 · 41 citations

Device Modeling, Electrical Engineering, Engineering +9

Two-dimensional energy-dependent models for the simulation of substrate current in submicron MOSFET's

V.M. Agostinelli, T.J. Bordelon, Xiaolin Wang et al. · IEEE Transactions on Electron Devices · 1994 · 18 citations

Engineering, Two-dimensional Energy-dependent Models, Impact Ionization Rate +21

An energy-dependent two-dimensional substrate current model for the simulation of submicrometer MOSFET's

V.M. Agostinelli, T.J. Bordelon, X.L. Wang et al. · IEEE Electron Device Letters · 1992 · 18 citations

Substrate Current Model, Engineering, Integrated Circuits +16