MODFET 2-D hydrodynamic energy modeling: optimization of subquarter-micron-gate structures

Abstract

Using a two-dimensional hydrodynamic energy model incorporating nonstationary electron dynamics and nonisothermal electron transport (which characterizes submicron-gate MODFETs), the main physical phenomena that govern the device performance at 300 K are highlighted. This covers velocity overshoot effects, stationary-domain formation, and real space transfer. The model is then used systematically to predict the precise values of the small-signal parameters for different bias conditions. The potential performance improvement achieved by reducing the gate length below 0.2 mu m is investigated. It is shown that improvement in transconductance is achieved through gate-length reduction if a severe restriction on the aspect ratio is respected.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>