Hydrodynamic Device Modeling
Hydrodynamic Device Modeling is a computational modeling approach that extends drift-diffusion theory by incorporating carrier temperature and velocity fields as independent variables to describe hot-carrier effects and high-field transport phenomena in semiconductor devices.
190
Publications
6.6K
Citations
501
Authors
231
Institutions
Publications per year
2017–2026
29
Parents
190
High-temperature modeling of AlGaN/GaN HEMTs
S. Vitanov, V. Palankovski, R. Quay · Solid-State Electronics · 2010 · 147 citations
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231
University of Catania
Catania, Italy
10 h-index
16 publications
324 citations

University of L'Aquila
L’Aquila, Italy
9 h-index
14 publications
508 citations
IBM (United States)
Armonk, United States
8 h-index
11 publications
452 citations

McGill University
Montreal, Canada
8 h-index
10 publications
401 citations

Chinese Academy of Sciences
Beijing, China
7 h-index
15 publications
791 citations

Champlain Regional College
Sherbrooke, Canada
6 h-index
6 publications
155 citations
Academy of Mathematics and Systems Science
Beijing, China
6 h-index
11 publications
485 citations
Brown University
Providence, United States
6 h-index
7 publications
352 citations
1–8 of 231
13 publications · 514 citations
12
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12 publications · 435 citations
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10 publications · 359 citations
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9 publications · 213 citations
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7 publications · 265 citations
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