Transient Device Modeling

Transient Device Modeling is a computational modeling approach that characterizes the time-dependent behavior of semiconductor devices by solving dynamic equations governing charge transport, electric fields, and energy distribution under varying operating conditions.

748

Publications

26.1K

Citations

2.2K

Authors

648

Institutions

Publications per year

2017–2026

89

Authors

2.2K

  1. DM
    Dale McMorrow

    United States Naval Research Laboratory, United States

    8 publications · 198 citations

    8

    h-index

  2. RD
    Ronald D. Schrimpf

    Vanderbilt University, United States

    8 publications · 292 citations

    8

    h-index

  3. AL
    Andrea L. Lacaita

    Politecnico di Milano, Italy

    7 publications · 309 citations

    7

    h-index

  4. RD
    R.W. Dutton

    Stanford University, United States

    6 publications · 695 citations

    6

    h-index

  5. KH
    K. Horio

    Shibaura Institute of Technology, Japan

    6 publications · 250 citations

    6

    h-index

1–5 of 2.2K

Venues

  1. IEEE Transactions on Electron Devices

    104 publications · 4.6K citations

    36

    h-index

  2. IEEE Transactions on Nuclear Science

    55 publications · 2K citations

    27

    h-index

  3. Journal of Applied Physics

    40 publications · 1.7K citations

    22

    h-index

  4. Solid-State Electronics

    29 publications · 1K citations

    17

    h-index

  5. IEEE Transactions on Power Electronics

    19 publications · 849 citations

    17

    h-index

1–5