Transient Device Modeling
Transient Device Modeling is a computational modeling approach that characterizes the time-dependent behavior of semiconductor devices by solving dynamic equations governing charge transport, electric fields, and energy distribution under varying operating conditions.
748
Publications
26.1K
Citations
2.2K
Authors
648
Institutions
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2017–2026
89
Parents
748
Davide Bisi, Matteo Meneghini, Carlo De Santi et al. · IEEE Transactions on Electron Devices · 2013 · 443 citations · Full text
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Centre National de la Recherche Scientifique
Paris, France
15 h-index
62 publications
1.9K citations

United States Naval Research Laboratory
Washington, United States
14 h-index
39 publications
992 citations
University of California, Berkeley
Berkeley, United States
12 h-index
37 publications
926 citations
University of Illinois Urbana-Champaign
Urbana, United States
12 h-index
30 publications
1K citations

University of Bologna
Bologna, Italy
11 h-index
41 publications
1.2K citations
University of Florida
Gainesville, United States
11 h-index
25 publications
784 citations
Massachusetts Institute of Technology
Cambridge, United States
11 h-index
26 publications
1.3K citations
IBM Research - Thomas J. Watson Research Center
Yorktown Heights, United States
10 h-index
12 publications
308 citations
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104 publications · 4.6K citations
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55 publications · 2K citations
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40 publications · 1.7K citations
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29 publications · 1K citations
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19 publications · 849 citations
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