K. Horio

Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface

K. Horio, H. Yanai · IEEE Transactions on Electron Devices · 1990 · 173 citations

Wide-bandgap Semiconductor, Engineering, Current Transport +18

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High-<inline-formula> <tex-math notation="LaTeX">${k}$ </tex-math> </inline-formula> Passivation Layer and High Acceptor Density in Buffer Layer

Toshiki Kabemura, Shingo Ueda, Yuki Kawada et al. · IEEE Transactions on Electron Devices · 2018 · 95 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Physics-based simulation of buffer-trapping effects on slow current transients and current collapse in GaN field effect transistors

K. Horio, K. Yonemoto, H. Takayanagi et al. · Journal of Applied Physics · 2005 · 94 citations · Full text

Device Modeling, Electrical Engineering, Semiconductor Device +13

Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-$k$ Passivation Layer

Hideyuki Hanawa, Hiraku Onodera, Atsushi Nakajima et al. · IEEE Transactions on Electron Devices · 2014 · 93 citations

Numerical Analysis, Wide-bandgap Semiconductor, Electrical Engineering +12

Computer-aided analysis of GaAs n-i-n structures with a heavily compensated i-layer

K. Horio, T. Ikoma, H. Yanai · IEEE Transactions on Electron Devices · 1986 · 68 citations

Device Modeling, Wide-bandgap Semiconductor, Electrical Engineering +14