Hideyuki Hanawa

Numerical Analysis of Breakdown Voltage Enhancement in AlGaN/GaN HEMTs With a High-$k$ Passivation Layer

Hideyuki Hanawa, Hiraku Onodera, Atsushi Nakajima et al. · IEEE Transactions on Electron Devices · 2014 · 93 citations

Numerical Analysis, Wide-bandgap Semiconductor, Electrical Engineering +12

Increase in breakdown voltage of AlGaN/GaN HEMTs with a high‐<i>k</i> dielectric layer

Hideyuki Hanawa, K. Horio · physica status solidi (a) · 2014 · 36 citations

Materials Engineering, Semiconductors, Electrical Engineering +14

Analysis of Breakdown Voltages in AlGaN/GaN HEMTs With Low-${k}$ /High-${k}$ Double Passivation Layers

Kai Nakamura, Hideyuki Hanawa, K. Horio · IEEE Transactions on Device and Materials Reliability · 2019 · 23 citations · Full text

Effects of buffer leakage current on breakdown characteristics in AlGaN/GaN HEMTs with a high-k passivation layer

Hideyuki Hanawa, Yoshiki Satoh, K. Horio · Microelectronic Engineering · 2015 · 14 citations

Wide-bandgap Semiconductor, Breakdown Characteristics, Electrical Engineering +6

Effects of acceptors in a Fe-doped buffer layer on breakdown characteristics of AlGaN/GaN high electron mobility transistors with a high-<i>k</i>passivation layer

Yuuki Kawada, Hideyuki Hanawa, K. Horio · Japanese Journal of Applied Physics · 2017 · 11 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Breakdown Characteristics +10