Finite-Element Analysis of Semiconductor Devices: The FIELDAY Program

Abstract

The FIELDAY program simulates semiconductor devices of arbitrary shape in one, two, or three dimensions operating under transient or steady-state conditions. A wide variety of physical effects, important in bipolar and field-effect transistors, can be modeled. The finite-element method transforms the continuum description of mobile carrier transport in a semiconductor device to a simulation model at a discrete number of points. Coupled and decoupled algorithms offer two methods of linearizing the differential equations. Direct techniques are used to solve the resulting matrix equations. Pre- and post-processors enable users to rapidly generate new models and analyze results. Specific examples illustrate the flexibility and accuracy of FIELDAY.