Concepedia

Indium droplet formation during molecular beam epitaxy of InGaN

V. P. Chaly, B. Borisov, D. M. Demidov, D. M. Krasovitsky, Yu.V. Pogorelsky, A. P. Shkurko, S. Yu. Karpov

Journal of Crystal Growth · 1999 · 20 citations · 8 references

DOI

Concepts

References

8

Growth and applications of Group III-nitrides

O. Ambacher · Journal of Physics D Applied Physics · 1998 · 1.4K citations

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Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

D. Doppalapudi, Soumendra N. Basu, Karl Ludwig et al. · Journal of Applied Physics · 1998 · 228 citations · Full text

, , +17

Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy

M. Mesrine, N. Grandjean, J. Massies · Applied Physics Letters · 1998 · 127 citations · Full text

, , +16

MBE Growth of (In)GaN for LED Applications

H. Riechert, R. Averbeck, A. Graber et al. · MRS Proceedings · 1996 · 97 citations

, , +14

Incorporation of indium during molecular beam epitaxy of InGaN

T. Böttcher, S. Einfeldt, V. Kirchner et al. · Applied Physics Letters · 1998 · 93 citations

, , +17