High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, +1

Japanese Journal of Applied Physics

High-brightness Ingan BlueEngineeringGreen LedsLuminescence PropertyTypical Green Leds +14

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller, +5

Applied Physics Letters

Materials ScienceDislocation DensitiesEpitaxial GrowthEngineeringDislocation Interaction +10

Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition

Werner Götz, N. M. Johnson, J. Walker, +2

Applied Physics Letters

Materials EngineeringSemiconductorsChemical EngineeringMaterials ScienceActivation Kinetics +10

InGaN/AlGaN blue-light-emitting diodes

Shuji Nakamura

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

White OledElectrical EngineeringBlue-green LedsEngineeringSolid-state Lighting +10

Electron transport mechanism in gallium nitride

R. J. Molnar, Ting Lei, T. D. Moustakas

Applied Physics Letters

SemiconductorsSemiconductor TechnologyEngineeringElectronic MaterialsPhysics +9

Exciton fine structure in undoped GaN epitaxial films

D. Volm, K. Oettinger, T. Streibl, +11

Physical review. B, Condensed matter

Wide-bandgap SemiconductorLayer ThicknessPhotoluminescenceEngineeringPhysics +10

Growth of zinc blende-GaN on β-SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source

Hsiang‐Lin Liu, A. C. Frenkel, J. G. Kim, +1

Journal of Applied Physics

Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering +13

Electron Hall mobility of <i>n</i>-GaN

D. L. Rode, D. Kurt Gaskill

Applied Physics Letters

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics +9

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE

T. D. Moustakas, R. J. Molnar, Ting Lei, +2

MRS Proceedings

Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering +9

Atomic nitrogen production in a molecular-beam epitaxy compatible electron cyclotron resonance plasma source

R. P. Vaudo, J. W. Cook, J. F. Schetzina

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Microwave SpectroscopyEngineeringPhysicsAtomic Emission SpectroscopyNatural Sciences +11