Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors - Concepedia

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Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors

156

Citations

29

References

2003

Year

A. P. Zhang, L.B. Rowland, E.B. Kaminsky, V. Tilak, J. C. Grande, Julie Teetsov, A. Vertiatchikh, L.F. Eastman

Journal of Electronic Materials

Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsDevice PerformanceAluminum Gallium NitrideGan Power Device

References

	Year	Citations

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