Seed layer enhancement by electrochemical deposition: The copper seed solution for beyond 45nm

Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions

Karen Holloway, P. M. Fryer, C. Cabral et al. · Journal of Applied Physics · 1992 · 448 citations

Engineering, Materials Engineering, Materials Science +17

High-performance interconnects: an integration overview

Robert Havemann, J.A. Hutchby · Proceedings of the IEEE · 2001 · 334 citations

Engineering, Computer Engineering, Electrical Engineering +17

Reliability challenges for copper interconnects

Baozhen Li, Timothy D. Sullivan, Tom C. Lee et al. · Microelectronics Reliability · 2003 · 285 citations

Engineering, Electrical Engineering, Materials Science +14

Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallization

Kyung-Hoon Min, Kyu-Chang Chun, Ki‐Bum Kim · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 261 citations

Natural Sciences, Materials Engineering, Materials Science +17

Diffusion barrier property of TaN between Si and Cu

Takeo Oku, Eiji Kawakami, Masaki Uekubo et al. · Applied Surface Science · 1996 · 242 citations

Natural Sciences, Materials Engineering, Materials Science +10