Analysis of current conduction mechanisms in atomic-layer-deposited Al2O3 gate on 4H silicon carbide

Abstract

Current conduction mechanisms of an atomic-layer-deposited Al2O3 gate on n-type 4H SiC have been systematically investigated, analyzed, and reported in this letter. It has been revealed that space charge limited, Poole-Frenkel (PF) emission, combination of PF emission and Fowler-Nordheim tunneling are the dominate current conduction mechanisms in the dielectric. Besides, Schottky emission has also been proposed as a possible leakage path at temperature beyond the investigated range. A relationship among the conduction mechanism, temperature, and applied electric field has been presented.