F. Chen

Internal photoemission of electrons and holes from (100)Si into HfO2

V. V. Afanas’ev, A. Stesmans, F. Chen et al. · Applied Physics Letters · 2002 · 200 citations

Engineering, Optoelectronic Devices, Silicon On Insulator +16

HfO 2 -based insulating stacks on 4H–SiC(0001)

V. V. Afanas’ev, A. Stesmans, F. Chen et al. · Applied Physics Letters · 2003 · 86 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Electrical conduction and band offsets in Si/HfxTi1−xO2/metal structures

V. V. Afanas’ev, A. Stesmans, F. Chen et al. · Journal of Applied Physics · 2004 · 43 citations

Oxide Heterostructures, Materials Science, Electrical Engineering +15

Paramagnetic NO2 centers in thin γ-irradiated HfO2 layers on (100)Si revealed by electron spin resonance

A. Stesmans, V. V. Afanas’ev, F. Chen et al. · Applied Physics Letters · 2004 · 17 citations

Materials Science, Semiconductor Technology, Paramagnetic No2 Centers +15