Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport - Concepedia

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Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport

78

Citations

19

References

2009

Year

Noboru Ohtani, Masakazu Katsuno, Masashi Nakabayashi, Tatsuo Fujimoto, Hiroshi Tsuge, Hirokatsu Yashiro, Takashi Aigo, Hosei Hirano, Taizo Hoshino, Kohei Tatsumi

Journal of Crystal Growth

Materials ScienceSemiconductor TechnologyEngineeringApplied PhysicsCondensed Matter PhysicsNitrogen-doped N+ 4H–sicPhysical Vapor TransportChemical Vapor Deposition

References

	Year	Citations

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