Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport

Site-competition epitaxy for superior silicon carbide electronics

David Larkin, Philip G. Neudeck, J. A. Powell et al. · Applied Physics Letters · 1994 · 321 citations

Engineering, Materials Engineering, Materials Science +16

Dislocation conversion in 4H silicon carbide epitaxy

S. Ha, P. Mieszkowski, Marek Skowroński et al. · Journal of Crystal Growth · 2002 · 238 citations

Engineering, Materials Engineering, Materials Science +14

Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices

Hiroyuki Matsunami · Japanese Journal of Applied Physics · 2004 · 198 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Observation of 4H–SiC to 3C–SiC polytypic transformation during oxidation

Robert S. Okojie, Ming Xhang, Pirouz Pirouz et al. · Applied Physics Letters · 2001 · 153 citations

Natural Sciences, Materials Engineering, Materials Science +17

Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane

Jun Takahashi, Masatoshi Kanaya, Yuichiro Fujiwara · Journal of Crystal Growth · 1994 · 152 citations

Engineering, Materials Engineering, Materials Science +16