Tatsuo Fujimoto

Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport

Noboru Ohtani, Masakazu Katsuno, Masashi Nakabayashi et al. · Journal of Crystal Growth · 2009 · 78 citations

Materials Science, Semiconductor Technology, Engineering +5

Growth of large high-quality SiC single crystals

Noboru Ohtani, Tatsuo Fujimoto, Masakazu Katsuno et al. · Journal of Crystal Growth · 2002 · 68 citations

Materials Science, Materials Engineering, Engineering +4

Kerr microscopy observation of nitrogenated Sm2Fe17 intermetallic compounds

Toshio Mukai, Tatsuo Fujimoto · Journal of Magnetism and Magnetic Materials · 1992 · 62 citations

Materials Science, Transition Metal Chalcogenides, Material Analysis +4

Step bunching behaviour on the {0001} surface of hexagonal SiC

Noboru Ohtani, Masakazu Katsuno, Takashi Aigo et al. · Journal of Crystal Growth · 2000 · 57 citations

Engineering, Mechanical Engineering, Applied Physics +3

Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals

Chisato Taniguchi, Aiko Ichimura, Noboru Ohtani et al. · Journal of Applied Physics · 2016 · 50 citations

Materials Science, Materials Engineering, Engineering +11