Masashi Nakabayashi

Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport

Noboru Ohtani, Masakazu Katsuno, Masashi Nakabayashi et al. · Journal of Crystal Growth · 2009 · 78 citations

Materials Science, Semiconductor Technology, Engineering +5

Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals

Noboru Ohtani, Masakazu Katsuno, Hiroshi Tsuge et al. · Journal of Crystal Growth · 2005 · 39 citations

Materials Science, Materials Engineering, Single Crystals +11

Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals

Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto et al. · Japanese Journal of Applied Physics · 2009 · 27 citations

Engineering, Severe Plastic Deformation, Mechanical Engineering +17

Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities

Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno et al. · Materials science forum · 2008 · 25 citations

Materials Engineering, Materials Science, Sic Crystals +13

Dislocation processes during SiC bulk crystal growth

Noboru Ohtani, Masakazu Katsuno, Hiroshi Tsuge et al. · Microelectronic Engineering · 2005 · 23 citations

Materials Engineering, Materials Science, Engineering +5