Hiroshi Tsuge - Concepedia

Author

Hiroshi Tsuge

Nippon Steel (Japan)

Also Known As

H. Tsuge, Hiroshi TSUGE, Hiroshi Tsuge

Publications

606

Citations

H-Index

Concepts

All Affiliations

Nippon Steel (Japan)Kwansei Gakuin University

About

Hiroshi Tsuge is an author at Nippon Steel (Japan) specializing in applied physics, materials science, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	18	463
2	Applied Physics	12	15	409
3	Natural Sciences	1	1	10
4	Chemistry	1	1	10
5	Civil Engineering	1	1	12

Hiroshi Tsuge

Publications

488

Citations

H-Index

Page 1

	Year	Citations
Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport Noboru Ohtani, Masakazu Katsuno, Masashi Nakabayashi, Journal of Crystal Growth Materials ScienceSemiconductor TechnologyEngineeringApplied PhysicsCondensed Matter Physics	2009	78
Step bunching behaviour on the {0001} surface of hexagonal SiC Noboru Ohtani, Masakazu Katsuno, Takashi Aigo, Journal of Crystal Growth EngineeringMechanical EngineeringApplied PhysicsHexagonal SicCarbide	2000	57
Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals Chisato Taniguchi, Aiko Ichimura, Noboru Ohtani, Journal of Applied Physics Materials ScienceMaterials EngineeringEngineeringPhysicsTheoretical Investigation	2016	50
Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals Noboru Ohtani, Masakazu Katsuno, Hiroshi Tsuge, Journal of Crystal Growth Materials ScienceMaterials EngineeringSingle CrystalsEngineeringDislocation Interaction	2005	39
Structural properties of subgrain boundaries in bulk SiC crystals Masakazu Katsuno, Noboru Ohtani, Takashi Aigo, Journal of Crystal Growth Materials ScienceEngineeringCondensed Matter PhysicsBulk Sic CrystalsCarbide	2000	32
Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals Noboru Ohtani, Masakazu Katsuno, Tatsuo Fujimoto, Japanese Journal of Applied Physics EngineeringSevere Plastic DeformationMechanical EngineeringBpd Multiplication Process4H-sic Single Crystals	2009	27
Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities Masashi Nakabayashi, Tatsuo Fujimoto, Masakazu Katsuno, Materials science forum Materials EngineeringMaterials ScienceSic CrystalsDiameter Sic CrystalsEngineering	2008	25
Surface morphology and step instability on the (0001)C facet of physical vapor transport-grown 4H–SiC single crystal boules Tomoki Yamaguchi, Kohei Ohtomo, Shunsuke Sato, Journal of Crystal Growth	2015	25
Dislocation processes during SiC bulk crystal growth Noboru Ohtani, Masakazu Katsuno, Hiroshi Tsuge, Microelectronic Engineering Materials EngineeringMaterials ScienceEngineeringDislocation InteractionApplied Physics	2005	23
Structural investigation of the seeding process for physical vapor transport growth of 4H–SiC single crystals Noboru Ohtani, Chikashi Ohshige, Masakazu Katsuno, Journal of Crystal Growth Materials ScienceSingle CrystalsEngineeringCrystal Growth TechnologyApplied Physics	2013	20

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