Hiroshi Tsuge

Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport

Noboru Ohtani, Masakazu Katsuno, Masashi Nakabayashi et al. · Journal of Crystal Growth · 2009 · 78 citations

Materials Science, Semiconductor Technology, Engineering +5

Step bunching behaviour on the {0001} surface of hexagonal SiC

Noboru Ohtani, Masakazu Katsuno, Takashi Aigo et al. · Journal of Crystal Growth · 2000 · 57 citations

Engineering, Mechanical Engineering, Applied Physics +3

Theoretical investigation of the formation of basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals

Chisato Taniguchi, Aiko Ichimura, Noboru Ohtani et al. · Journal of Applied Physics · 2016 · 50 citations

Materials Science, Materials Engineering, Engineering +11

Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals

Noboru Ohtani, Masakazu Katsuno, Hiroshi Tsuge et al. · Journal of Crystal Growth · 2005 · 39 citations

Materials Science, Materials Engineering, Single Crystals +11

Structural properties of subgrain boundaries in bulk SiC crystals

Masakazu Katsuno, Noboru Ohtani, Takashi Aigo et al. · Journal of Crystal Growth · 2000 · 32 citations

Materials Science, Engineering, Condensed Matter Physics +2