Takashi Aigo

Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport

Noboru Ohtani, Masakazu Katsuno, Masashi Nakabayashi et al. · Journal of Crystal Growth · 2009 · 81 citations

Natural Sciences, Materials Engineering, Materials Science +16

Growth of large high-quality SiC single crystals

Noboru Ohtani, Tatsuo Fujimoto, Masakazu Katsuno et al. · Journal of Crystal Growth · 2002 · 69 citations

Natural Sciences, Materials Engineering, Materials Science +12

Step bunching behaviour on the {0001} surface of hexagonal SiC

Noboru Ohtani, Masakazu Katsuno, Takashi Aigo et al. · Journal of Crystal Growth · 2000 · 58 citations

Natural Sciences, Materials Engineering, Materials Science +7

Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals

Noboru Ohtani, Masakazu Katsuno, Hiroshi Tsuge et al. · Journal of Crystal Growth · 2005 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +17

Super low-noise HEMTs with a T-shaped WSi _x gate

Isamu Hanyu, Satoru Asai, Mitsuji Nunokawa et al. · Electronics Letters · 1988 · 35 citations

Engineering, Electrical Engineering, Materials Science +17